Tokyo Electron 1D80-003300-11氣門角閥 PDF資料
1.產(chǎn) 品 資 料 介 紹:
中文資料:
TEL Tokyo Electron 1D80-003300-11 氣門角閥 是應(yīng)用于半導體設(shè)備中一種用于精確氣體控制的關(guān)鍵部件。該組件在真空或氣體處理系統(tǒng)中起著“開/關(guān)”和流量調(diào)節(jié)的作用,主要用于工藝氣體的分配、隔離與調(diào)節(jié)。
一、產(chǎn)品名稱
部件型號: 1D80-003300-11
產(chǎn)品描述: 氣門角閥(可能為帶驅(qū)動的高潔凈氣體閥門)
適用設(shè)備: Tokyo Electron(TEL)半導體制程設(shè)備,如CVD、Etcher、ALD等系統(tǒng)
二、功能與作用
氣體流通控制
控制特定工藝氣體(如 SiH?、NH?、O? 等)在半導體工藝腔體中的通斷狀態(tài)。真空隔離功能
用作真空腔體與氣體源之間的隔離閥門,具備優(yōu)異的密封性能。角閥結(jié)構(gòu)設(shè)計
流道呈90度結(jié)構(gòu),適合設(shè)備內(nèi)部緊湊空間布局,降低顆粒堆積風險。自動化驅(qū)動支持
多數(shù)為氣動驅(qū)動或電動驅(qū)動,可由系統(tǒng)控制信號遠程啟閉。
三、典型應(yīng)用領(lǐng)域
CVD(化學氣相沉積)系統(tǒng)
控制前驅(qū)體氣體進入反應(yīng)腔,確保沉積厚度與均勻性。等離子體蝕刻系統(tǒng)
控制反應(yīng)性氣體的進入或排放,支持反應(yīng)工藝穩(wěn)定性。ALD(原子層沉積)設(shè)備
實現(xiàn)精確時間控制的氣體切換,滿足層層堆疊的精度需求。清洗與排氣系統(tǒng)
用于導通/關(guān)閉N?、Ar等惰性氣體路徑,協(xié)助設(shè)備清潔與氣路置換。
英文資料:
TEL Tokyo Electron 1D80-003300-11 valve angle valve is a key component used for precise gas control in semiconductor equipment. This component plays the role of "on/off" and flow regulation in vacuum or gas processing systems, mainly used for the distribution, isolation, and regulation of process gases.
1、 Product Name
Component model: 1D80-003300-11
Product Description: Valve Angle Valve (possibly a high-purity gas valve with drive)
Applicable equipment: Tokyo Electron (TEL) semiconductor process equipment, such as CVD, Etcher, ALD and other systems
2、 Function and Function
Gas circulation control
Control the on/off state of specific process gases (such as SiH ?, NH3, O ?, etc.) in the semiconductor process chamber.
Vacuum isolation function
Used as an isolation valve between vacuum chambers and gas sources, it has excellent sealing performance.
Structural design of angle valve
The flow channel has a 90 degree structure, which is suitable for compact space layout inside the equipment and reduces the risk of particle accumulation.
Automated driver support
Most of them are driven by pneumatic or electric means, and can be remotely opened and closed by system control signals.
3、 Typical application areas
CVD (Chemical Vapor Deposition) system
Control the precursor gas entering the reaction chamber to ensure deposition thickness and uniformity.
plasma etching system
Control the entry or emission of reactive gases to support the stability of the reaction process.
ALD (Atomic Layer Deposition) equipment
Realize precise time controlled gas switching to meet the precision requirements of layer by layer stacking.
Cleaning and exhaust system
Used to turn on/off inert gas paths such as N ? and Ar, assisting in equipment cleaning and gas path replacement.
2.產(chǎn) 品 展 示
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