IOR810 P-HB-IOR-80010000自動(dòng)化模塊，ABB說(shuō)明書(shū)在線閱讀
數(shù)據(jù)總線結(jié)構(gòu)MVME147上的數(shù)據(jù)總線結(jié)構(gòu)安排為容納8位、16位、32位和16/32位端口居住在董事會(huì)上。8位端口連接到本地總線，16位端口連接到本地總線的D16-D32和32位端口連接到本地總線的D00-D32。電池備份的RAM和時(shí)鐘SGS Thompson M48T18 RAM和時(shí)鐘芯片用于MVME147。該芯片提供時(shí)鐘、振蕩器、，電源故障檢測(cè)、內(nèi)存寫(xiě)保護(hù)和8184字節(jié)的內(nèi)存然而，只有4088字節(jié)的RAM可在MVME147。
IOR810 P-HB-IOR-80010000自動(dòng)化模塊將電池和水晶插頭插入M48T18。有2040字節(jié)的RAM可用。任何程序?qū)懭胍栽诟哂赥OD時(shí)鐘在早期版本上不起作用MVME147。
內(nèi)部電池的典型壽命為3至5年時(shí)鐘正在運(yùn)行，如果時(shí)鐘沒(méi)有運(yùn)行，則至少運(yùn)行10年已投入運(yùn)行。注意：時(shí)鐘是在省電的情況下從工廠發(fā)貨的模式ROM/PROM/EPROM/EEPROM上有四個(gè)32針ROM/PROM/EPROM/EEPROM插槽MVME147。它們被組織為兩個(gè)銀行，每個(gè)銀行有兩個(gè)插座銀行這些組被配置為MPU的字端口。每家銀行可以分別配置為8K x 8、16K x 8、32K x 8、64K x 8、128Kx 8、256K x 8、512K x 8或1M x 8 ROM/PROM/EPROM設(shè)備或2K x 8、8K x 8或32K x 8 EEPROM設(shè)備。有幾種不同的擦除/寫(xiě)入算法EEPROM設(shè)備取決于制造商。MVME147僅支持靜態(tài)RAM兼容的設(shè)備擦除/寫(xiě)入機(jī)制，如Xicor X28256或X2864H。設(shè)備定時(shí)要求
ROM/PROM/EPROM/EEPROM設(shè)備必須滿足計(jì)時(shí)如圖5-2所示。
ROM/PROM/EPROM/EEPROM設(shè)備保證
Data Bus Structure
The data bus structure on the MVME147 is arranged to
accommodate the 8-bit, 16-bit, 32-bit, and 16/32-bit ports that
reside on the board. The 8-bit ports are connected to D24-D32 of the
local bus, 16-bit ports are connected to D16- D32 of the local bus and
32-bit ports are connected to D00-D32 of the local bus.
Battery Backed Up RAM and Clock
The SGS-Thompson M48T18 RAM and clock chip is used on the
MVME147. This chip provides a time-of-day clock, oscillator,
power fail detection, memory write protection, and 8184 bytes of
RAM. However, only 4088 bytes of RAM are accessible on the
MVME147. The battery and crystal plug into the M48T18.
have 2040 bytes of RAM available. Any programs
written to use RAM in the address range above the
TOD clock will not work on an earlier version
MVME147.
The internal battery has a typical life span of 3 to 5 years when the
clock is running and a minimum of 10 years when the clock has not
been put in operation.
Note The clock is shipped from the factory in the power-save
mode.
ROM/PROM/EPROM/EEPROM
There are four 32-pin ROM/PROM/EPROM/EEPROM sockets on
the MVME147. They are organized as 2 banks with two sockets per
bank.
The banks are configured as word ports to the MPU. Each bank can
be separately configured for 8K x 8, 16K x 8, 32K x 8, 64K x 8, 128K
x 8, 256K x 8, 512K x 8, or 1M x 8 ROM/PROM/EPROM devices or
2K x 8, 8K x 8, or 32K x 8 EEPROM devices.
There are several different algorithms for erasing/writing to
EEPROM devices depending on the manufacturer. The MVME147
supports only those devices which have a static RAM compatible
erase/write mechanism such as the Xicor X28256 or X2864H.
Device Timing Requirements
The ROM/PROM/EPROM/EEPROM devices must meet the
timings shown in Figure 5-2.
The ROM/PROM/EPROM/ EEPROM devices are guaranteed the
