特點(diǎn)：全擴(kuò)散結(jié)構(gòu)
全擴(kuò)散結(jié)構(gòu)。放大柵極配置。阻斷能力敢達(dá)1800伏。高dV/dt能力。壓力組裝設(shè)備電氣特性和額定值阻斷-關(guān)斷狀態(tài)設(shè)備類型VRRM（1）VDRM（1個(gè)）VRSM（1）KP2500/12 1200 1200 1400 KP2500/14 1400 1400 1600 KP2500/16 1600 1600 1800 KP2500/28 1800 1800 2000 VRRM=重復(fù)峰值反向電壓VDRM=重復(fù)峰值關(guān)斷狀態(tài)電壓VRSM=非重復(fù)峰值反向電壓（2）重復(fù)峰值反向泄漏和關(guān)斷狀態(tài)泄漏IRRM/IDRM 5 mA 150 mA（3）臨界電壓上升率dV/dt（4）1000 V/?秒導(dǎo)通-接通狀態(tài)http://www.chinarunau.com第1頁，共3頁KT70cT注：（1）所有電壓額定值均適用于0至+125 oC溫度范圍內(nèi)施加的50Hz/60Hz正弦波形。（2） 10毫秒。最大脈沖寬度（3）Tj=125 oC時(shí)的最大值。（4） 線性和指數(shù)波形的最小值為67%額定VDRM。閘門打開。Tj=125℃。(5).di/dt的值根據(jù)標(biāo)準(zhǔn)JB/T 8950.2-2013參數(shù)符號(hào)最小值最大值標(biāo)準(zhǔn)確定。單位條件導(dǎo)通電流平均值IT（AV）2500 A正弦波，180°導(dǎo)通。
使用參數(shù)
Tc=70°C導(dǎo)通電流RMS值ITRMS 3925 A標(biāo)稱值峰值一周浪涌（非重復(fù)）電流ITSM 30000 A 10.0 ms（50Hz），正弦波形，180°傳導(dǎo)，Tj=125 oC I平方t 2 t 4.5x106 A2s 10 ms鎖存電流IL 1000 mA VD=12 V；RL=12歐姆保持電流IH 200 mA VD=12 V；I=2.5 A峰值導(dǎo)通狀態(tài)電壓VTM 1.45 V ITM=3000A；Tj=25oC閾值電壓，低電平VTO 0.92 V Tj=125oC斜坡電阻，低電平rT 0.12 m? 2500A至5000A通態(tài)電流的臨界上升率di/dt 200 A/s重復(fù)江蘇楊捷潤諾半導(dǎo)體有限公司電氣特性和額定值KP2500-功率晶閘管選通參數(shù)符號(hào)最小最大典型值。單位條件峰值柵功耗PGM 20 W平均柵功耗PG（AV）4 W柵觸發(fā)電流IGT 200 mA VD=12 V；RL=3歐姆；Tj=+25 oC柵極-觸發(fā)電壓VGT 0.70 2.5 V VD=12 V；RL=3歐姆；Tj=+25 oC峰值負(fù)電壓VGRM 5 V動(dòng)態(tài)參數(shù)符號(hào)最小值最大值典型值。機(jī)組條件延遲時(shí)間td 3.0 2.5?s ITM=100 A；VD＝67%VDRM柵極脈沖：VG＝30V；RG=10歐姆；tr=0.1μs；tp=20μs關(guān)斷時(shí)間（VR=-5 V）tq 300?s ITM=1000 A；di/dt=-10 A/?sVR＝50伏；dV/dt=30V/?sVD=67%VDRM；Tj=125 oC反向恢復(fù)電荷Qrr 2500?C ITM=1000Adi/dt=-10A/s；VR＝50伏；Tj=125℃熱特性和機(jī)械特性及額定值參數(shù)符號(hào)最小值最大值典型值。機(jī)組條件工作溫度Tj-40+125 oC存儲(chǔ)溫度Ttg-40+140 oC熱阻-連接到外殼R|（j-c）0.0125 oC/W雙面冷卻熱阻-外殼到散熱器R|。，有限公司外殼輪廓和尺寸KP2500-功率晶閘管
Fully diffused structure.
Fully diffused structure. Amplify the grid configuration. The blocking ability can reach 1800 volts. High dV/dt capability. Electrical characteristics and ratings of pressure assembly equipment Blocking off state Equipment type VRRM (1) VDRM (1) VRSM (1) KP2500/12 1200 1200 1400 KP2500/14 1400 1600 KP2500/16 1600 1800 KP2500/28 1800 1800 2000 VRRM=repetitive peak reverse voltage VDRM=repetitive peak off state voltage VRSM=non repetitive peak reverse voltage (2) repetitive peak reverse leakage and off state leakage IRRM/IDRM 5 mA 150 mA (3) Critical voltage rise rate dV/dt (4) 1000 V/? s conduction on state http://www.chinarunau.com Page 1 of 3 KT70cT Note: (1) All voltage ratings are applicable to 50Hz/60Hz sinusoidal waveform applied within the temperature range of 0 to+125 oC. (2) 10 ms. Maximum pulse width (3) Tj=maximum value at 125 oC. (4) The minimum value of linear and exponential waveforms is 67% of rated VDRM. The gate is open. Tj=125℃。 (5). The value of di/dt is determined according to the standard JB/T 8950.2-2013 minimum value and maximum value of parameter symbols. Average value of conduction current under unit condition IT (AV) 2500 A sine wave, 180 ° conduction.
Working with parameters
Tc=70 ° C conduction current RMS value ITRMS 3925 A nominal value peak one cycle surge (non repetitive) current ITSM 30000 A 10.0 ms (50Hz), sinusoidal waveform, 180 ° conduction, Tj=125 oC I square t 2 t 4.5x106 A2s 10 ms latch current IL 1000 mA VD=12 V; RL=12 ohm holding current IH 200 mA VD=12 V; I=2.5 A peak conduction state voltage VTM 1.45 V ITM=3000 A; Tj=25oC threshold voltage, low level VTO 0.92 V Tj=125oC slope resistance, low level rT 0.12 m ? 2500A to 5000A critical rise rate of on state current di/dt 200 A/s repeat the electrical characteristics and rating of Jiangsu Yangjie Runuo Semiconductor Co., Ltd. KP2500 - minimum and maximum typical value of power thyristor gating parameter symbol. Peak gate power consumption per unit condition PGM 20 W Average gate power consumption PG (AV) 4 W Gate trigger current IGT 200 mA VD=12 V; RL=3 ohms; Tj=+25 oC grid trigger voltage VGT 0.70 2.5 V VD=12 V; RL=3 ohms; Tj=+25 oC peak negative voltage VGRM 5 V dynamic parameter sign minimum value maximum value typical value. Unit condition delay time td 3.0 2.5 ? s ITM=100 A; VD=67% VDRM grid pulse: VG=30V; RG=10 ohms; tr=0.1 μ s； tp=20 μ S Off time (VR=- 5 V) tq 300 ? s ITM=1000 A; Di/dt=- 10 A/? sVR=50 V; dV/dt=30V/?sVD=67%VDRM； Tj=125 oC Reverse recovery charge Qrr 2500 ? C ITM=1000 Adi/dt=- 10A/s; VR=50 V; Tj=125 ℃ typical value of minimum value and maximum value of thermal and mechanical characteristics and rating parameter symbols. Unit condition Operating temperature Tj-40+125 oC Storage temperature Ttg-40+140 oC Thermal resistance - connected to housing R | (j-c) 0.0125 oC/W double-sided cooling thermal resistance - shell to radiator R |。， Company Limited Shell Outline and Dimensions KP2500 - Power Thyristors
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